Preparation of SiC Powders by CVD Method Using RF-Plasma
نویسندگان
چکیده
منابع مشابه
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The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: a...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Association, Japan
سال: 1986
ISSN: 1884-2127,0009-0255
DOI: 10.2109/jcersj1950.94.1089_517